Negative Capacitance beyond Ferroelectric Switches
نویسندگان
چکیده
منابع مشابه
The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors
Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105, China ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, Changsha, Hunan 410073, China Pacific Geoscience Centre, Geological Survey of Canada, 9860 West Saanich Road, Sidney, British Columbia, Can...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2018
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.8b05093